Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"High-speed and low-leakage FinFET SRAM cell with enhanced read and write ..."

Shairfe Muhammad Salahuddin, Volkan Kursun (2014)

> Home

Details and statistics

DOI: 10.1109/ISICIR.2014.7029512

access: closed

type: Conference or Workshop Paper

metadata version: 2017-06-15

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/isicir/SalahuddinK14
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/isicir/SalahuddinK14
Shairfe Muhammad Salahuddin, Volkan Kursun:
High-speed and low-leakage FinFET SRAM cell with enhanced read and write voltage margins. ISIC 2014: 312-315

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.