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"A simulation study about the memory operation of 3D-stacked capacitor-less ..."
Taegun Kim et al. (2023)
- Taegun Kim, Dong Keun Lee, Sihyun Kim, Sangwan Kim:
A simulation study about the memory operation of 3D-stacked capacitor-less 1T DRAM cells based on ferroelectric field-effect transistors (FeFETs). ISOCC 2023: 135-136
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