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"A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs ..."
Shairfe Muhammad Salahuddin, Hailong Jiao, Volkan Kursun (2013)
- Shairfe Muhammad Salahuddin, Hailong Jiao, Volkan Kursun:
A novel 6T SRAM cell with asymmetrically gate underlap engineered FinFETs for enhanced read data stability and write ability. ISQED 2013: 353-358
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