"40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU."

Yoshisato Yokoyama et al. (2014)

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DOI: 10.1109/ISQED.2014.6783302

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-25

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Yoshisato Yokoyama, Yuichiro Ishii, Hidemitsu Kojima, Atsushi Miyanishi, Yoshiki Tsujihashi, Shinobu Asayama, Kazutoshi Shiba, Koji Tanaka, Tatsuya Fukuda, Koji Nii, Kazumasa Yanagisawa:
40nm Ultra-low leakage SRAM at 170 deg.C operation for embedded flash MCU. ISQED 2014: 24-31

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