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"A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate."

Yan Li et al. (2008)

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DOI: 10.1109/ISSCC.2008.4523279

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-14

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  dblp key:
  - conf/isscc/LiLFPKPSNMHKHYKKWKMSHFKTKLKPHNCWOSWGCLHPDGKKCHPWQ08
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  persistent URL:
  - https://dblp.org/rec/conf/isscc/LiLFPKPSNMHKHYKKWKMSHFKTKLKPHNCWOSWGCLHPDGKKCHPWQ08
Yan Li, Seungpil Lee, Yupin Fong, Feng Pan, Tien-Chien Kuo, Jong Park, Tapan Samaddar, Hao Nguyen, Man Mui, Khin Htoo, Teruhiko Kamei, Masaaki Higashitani, Emilio Yero, Gyuwan Kwon, Phil Kliza, Jun Wan, Tetsuya Kaneko, Hiroshi Maejima, Hitoshi Shiga, Makoto Hamada, Norihiro Fujita, Kazunori Kanebako, Eugene Tam, Anne Koh, Iris Lu, Calvin Chia-Hong Kuo, Trung Pham, Jonathan Huynh, Qui Nguyen, Hardwell Chibvongodze, Mitsuyuki Watanabe, Ken Oowada, Grishma Shah, Byungki Woo, Ray Gao, Jim Chan, James Lan, Patrick Hong, Liping Peng, Debi Das, Dhritiman Ghosh, Vivek Kalluru, Sanjay Kulkarni, Raul Cernea, Sharon Huynh, Dimitris Pantelakis, Chi-Ming Wang, Khandker Quader:
A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate. ISSCC 2008: 506-507

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