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"Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ..."

Umesh Chand et al. (2022)

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DOI: 10.1109/VLSITECHNOLOGYANDCIR46769.2022.9830250

access: closed

type: Conference or Workshop Paper

metadata version: 2023-06-26

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  dblp key:
  - conf/vlsit/ChandALCHTFVT22
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Umesh Chand, Mohamed M. Sabry Aly, Manohar Lal, Chen Chun-Kuei, Sonu Hooda, Shih-Hao Tsai, Zihang Fang, Hasita Veluri, Aaron Voon-Yew Thean:
Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm²/V-s and1T-1RRAM Memory Cell Demonstration Memory Implications for Energy-Efficient Deep-Learning Computing. VLSI Technology and Circuits 2022: 326-327

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