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"Long-time-constant leaky-integrating oxygen-vacancy drift-diffusion FET ..."
Hisashi Inoue et al. (2023)
- Hisashi Inoue, Hiroto Tamura, Ai Kitoh, Xiangyu Chen, Zolboo Byambadorj, Takeaki Yajima, Yasushi Hotta, Tetsuya Iizuka, Gouhei Tanaka, Isao H. Inoue:
Long-time-constant leaky-integrating oxygen-vacancy drift-diffusion FET for human-interactive spiking reservoir computing. VLSI Technology and Circuits 2023: 1-2
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