"U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), ..."

Ming-Hung Wu et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185336

access: closed

type: Conference or Workshop Paper

metadata version: 2025-09-28

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Ming-Hung Wu, Ming-Chun Hong, Ching Shih, Yao-Jen Chang, Yu-Chen Hsin, Shih-Ching Chiu, Kuan-Ming Chen, Yi-Hui Su, Chih-Yao Wang, Shan-Yi Yang, Guan-Long Chen, Hsin-Han Lee, Sk. Ziaur Rahaman, I-Jung Wang, Chen-Yi Shih, Tsun-Chun Chang, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Tuo-Hung Hou:
U-MRAM: Transistor-Less, High-Speed (10 ns), Low-Voltage (0.6 V), Field-Free Unipolar MRAM for High-Density Data Memory. VLSI Technology and Circuits 2023: 1-2

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