"Simulation of E-Mode β -Ga2O3 Interlayer-Based ..."

Xiaoqing Chen, Feng Li, Herbert Hess (2025)

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DOI: 10.1109/ACCESS.2025.3589533

access: open

type: Journal Article

metadata version: 2025-08-27

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Xiaoqing Chen, Feng Li, Herbert Hess:
Simulation of E-Mode β -Ga₂O₃ Interlayer-Based Vertical Trench Power MOSFET With Fast-Switching Performance at High Temperatures. IEEE Access 13: 129493-129503 (2025)

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