"A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs."

He Guan et al. (2021)

> Home

Details and statistics

DOI: 10.1109/ACCESS.2020.3048227

access: open

type: Journal Article

metadata version: 2021-03-03

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/access/GuanSGZWW21
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/access/GuanSGZWW21
He Guan, Guiyu Shen, Bo Gao, Hao Zhang, Yucheng Wang, Shaoxi Wang:
A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs. IEEE Access 9: 9855-9863 (2021)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.