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"Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive ..."
Jinsu Jung et al. (2021)
- Jinsu Jung, Doowon Lee, Sungho Kim, Hee-Dong Kim:
Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode. IEEE Access 9: 144264-144269 (2021)
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