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"Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive ..."

Jinsu Jung et al. (2021)

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DOI: 10.1109/ACCESS.2021.3118386

access: open

type: Journal Article

metadata version: 2021-12-15

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Jinsu Jung, Doowon Lee, Sungho Kim, Hee-Dong Kim:
Self-Rectifying Characteristics Observed in O-Doped ZrN Resistive Switching Memory Devices Using Schottky Barrier Type Bottom Electrode. IEEE Access 9: 144264-144269 (2021)

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