"Ferroelectric Field Effect Transistors-Based Content-Addressable ..."

Athira Sunil et al. (2024)

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DOI: 10.1002/AISY.202300461

access: open

type: Journal Article

metadata version: 2024-05-17

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Athira Sunil, Masud Rana SK, Maximilian Lederer, Yannick Raffel, Franz Müller, Ricardo Olivo, Raik Hoffmann, Konrad Seidel, Thomas Kämpfe, Bhaswar Chakrabarti, Sourav De:
Ferroelectric Field Effect Transistors-Based Content-Addressable Storage-Class Memory: A Study on the Impact of Device Variation and High-Temperature Compatibility. Adv. Intell. Syst. 6(4) (2024)

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