"High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge ..."

Qingyuan Chang et al. (2024)

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DOI: 10.1007/S11432-024-4164-1

access: closed

type: Journal Article

metadata version: 2025-05-02

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Qingyuan Chang, Bin Hou, Ling Yang, Mei Wu, Meng Zhang, Hao Lu, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Qian Yu, Shiming Li, Youjun Zhu, Xiaohua Ma, Yue Hao:
High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. Sci. China Inf. Sci. 67(12) (2024)

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