"High-breakdown-voltage (>3000 V) and low-power-dissipation ..."

Yutong Fan et al. (2023)

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DOI: 10.1007/S11432-022-3707-2

access: closed

type: Journal Article

metadata version: 2024-03-11

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Yutong Fan, Xi Liu, Ren Huang, Yu Wen, Weihang Zhang, Jincheng Zhang, Zhihong Liu, Shenglei Zhao:
High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation. Sci. China Inf. Sci. 66(12) (2023)

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