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"In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory."

Brian L. Ji et al. (2015)

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DOI: —

access: open

type: Informal or Other Publication

metadata version: 2023-05-24

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  - electronic edition @ arxiv.org (open access)
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  dblp key:
  - journals/corr/JiLYGDVVCSBJSBK15
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  persistent URL:
  - https://dblp.org/rec/journals/corr/JiLYGDVVCSBJSBK15
Brian L. Ji, H. Li, Q. Ye, S. Gausepohl, S. Deora, Dmitry Veksler, S. Vivekanand, H. Chong, H. Stamper, T. Burroughs, C. Johnson, M. Smalley, S. Bennett, V. Kaushik, J. Piccirillo, M. Rodgers, M. Passaro, M. Liehr:
In-Line-Test of Variability and Bit-Error-Rate of HfOx-Based Resistive Memory. CoRR abs/1509.00070 (2015)

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