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"Threshold-voltage shift model based on electron tunneling under positive ..."
Piao-Rong Xu, Ruo-He Yao (2018)
- Piao-Rong Xu, Ruo-He Yao:
Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors. Displays 53: 14-17 (2018)
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