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"Continuous MOSFET performance increase with device scaling: The role of ..."

Dimitri A. Antoniadis et al. (2006)

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DOI: 10.1147/RD.504.0363

access: closed

type: Journal Article

metadata version: 2020-03-13

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Dimitri A. Antoniadis, Ingvar Åberg, Cáit Ní Chléirigh, Osama M. Nayfeh, Ali Khaki-Firooz, Judy L. Hoyt:
Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. IBM J. Res. Dev. 50(4-5): 363-376 (2006)

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