"Optimizing read disturb phenomenon with new read scheme by ..."

Sangmin Ahn, Hyungcheol Shin (2021)

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DOI: 10.1587/ELEX.18.20210299

access: open

type: Journal Article

metadata version: 2022-02-03

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  - journals/ieiceee/AhnS21
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  - https://dblp.org/rec/journals/ieiceee/AhnS21
Sangmin Ahn, Hyungcheol Shin:
Optimizing read disturb phenomenon with new read scheme by partial-boosting channel in 3-D NAND Flash memories. IEICE Electron. Express 18(19): 20210299 (2021)

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