"A 128 Kb HfO2 ReRAM with Novel Double-Reference and ..."

Cheng-Ying Chen et al. (2016)

> Home

Details and statistics

DOI: 10.1587/ELEX.13.20160061

access: open

type: Journal Article

metadata version: 2021-02-12

- view
  - electronic edition via DOI (open access)
  authority control:
- export record
  dblp key:
  - journals/ieiceee/ChenSSZ16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/ChenSSZ16
Cheng-Ying Chen, Hongbin Sun, Haihua Shen, Feng Zhang:
A 128 Kb HfO₂ ReRAM with Novel Double-Reference and Dynamic-Tracking scheme for write yield improvement. IEICE Electron. Express 13(6): 20160061 (2016)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.