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"Channel thickness dependence on InGaAs MOSFET with n-InP source for high ..."
Kazuto Ohsawa et al. (2014)
- Kazuto Ohsawa, Atsushi Kato, Toru Kanazawa, Eiji Uehara, Yasuyuki Miyamoto:
Channel thickness dependence on InGaAs MOSFET with n-InP source for high current density. IEICE Electron. Express 11(14): 20140567 (2014)
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