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"Read/write margin enhanced 10T SRAM for low voltage application."

Chunyu Peng et al. (2016)

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DOI: 10.1587/ELEX.13.20160382

access: open

type: Journal Article

metadata version: 2021-02-12

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  dblp key:
  - journals/ieiceee/PengGLWJ16
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  persistent URL:
  - https://dblp.org/rec/journals/ieiceee/PengGLWJ16
Chunyu Peng, Lijun Guan, Wenjuan Lu, Xiulong Wu, Xincun Ji:
Read/write margin enhanced 10T SRAM for low voltage application. IEICE Electron. Express 13(12): 20160382 (2016)

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