"A 0.2 V-1.8 V 8T SRAM with Bit-interleaving Capability."

Hui Zhao et al. (2014)

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DOI: 10.1587/ELEX.11.20140229

access: open

type: Journal Article

metadata version: 2021-02-12

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  - https://dblp.org/rec/journals/ieiceee/ZhaoFCSG14
Hui Zhao, Shiquan Fan, Leicheng Chen, Yan Song, Li Geng:
A 0.2 V-1.8 V 8T SRAM with Bit-interleaving Capability. IEICE Electron. Express 11(8) (2014)

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