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"Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices."
Doohyung Cho et al. (2017)
- Doohyung Cho, Kunsik Park, Jongil Won, Sang-Gi Kim, Kwangsoo Kim:
Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices. IEICE Trans. Electron. 100-C(5): 439-445 (2017)
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