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"Flattening Process of Si Surface below 1000°C Utilizing ..."
Dae-Hee Han, Shun'ichiro Ohmi (2013)
- Dae-Hee Han, Shun'ichiro Ohmi:
Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation. IEICE Trans. Electron. 96-C(5): 669-673 (2013)
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