"1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing ..."

Fumio Harima et al. (2008)

> Home

Details and statistics

DOI: 10.1093/IETELE/E91-C.7.1104

access: closed

type: Journal Article

metadata version: 2020-04-11

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/ieicet/HarimaBTI08
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/ieicet/HarimaBTI08
Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata:
1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p⁺-GaAs Gate Hetero-Junction FET. IEICE Trans. Electron. 91-C(7): 1104-1108 (2008)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.