"Improvement of Read Disturb, Program Disturb and Data Retention by Memory ..."

Teruyoshi Hatanaka et al. (2011)

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DOI: 10.1587/TRANSELE.E94.C.539

access: closed

type: Journal Article

metadata version: 2020-04-11

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Teruyoshi Hatanaka, Mitsue Takahashi, Shigeki Sakai, Ken Takeuchi:
Improvement of Read Disturb, Program Disturb and Data Retention by Memory Cell V_TH Optimization of Ferroelectric (Fe)-NAND Flash Memories for Highly Reliable and Low Power Enterprise Solid-State Drives (SSDs). IEICE Trans. Electron. 94-C(4): 539-547 (2011)

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