"NAND Phase Change Memory with Block Erase Architecture and Pass-Transistor ..."

Koh Johguchi, Kasuaki Yoshioka, Ken Takeuchi (2014)

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DOI: 10.1587/TRANSELE.E97.C.351

access: closed

type: Journal Article

metadata version: 2020-04-11

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Koh Johguchi, Kasuaki Yoshioka, Ken Takeuchi:
NAND Phase Change Memory with Block Erase Architecture and Pass-Transistor Design Requirements for Write and Disturbance. IEICE Trans. Electron. 97-C(4): 351-359 (2014)

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