"Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device ..."

Hyun Woo Kim et al. (2010)

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DOI: 10.1587/TRANSELE.E93.C.651

access: closed

type: Journal Article

metadata version: 2020-04-11

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Hyun Woo Kim, Dong Hun Kim, Joo Hyung You, Tae Whan Kim:
Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al₂O₃ and SiO₂ Stacked Tunneling Layers. IEICE Trans. Electron. 93-C(5): 651-653 (2010)

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