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"Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device ..."
Hyun Woo Kim et al. (2010)
- Hyun Woo Kim, Dong Hun Kim, Joo Hyung You, Tae Whan Kim:
Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers. IEICE Trans. Electron. 93-C(5): 651-653 (2010)
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