"Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron ..."

Takeshi Mizoguchi et al. (2017)

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DOI: 10.1587/TRANSELE.E100.C.321

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type: Journal Article

metadata version: 2020-04-11

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Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jürgen Mattausch:
Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications. IEICE Trans. Electron. 100-C(3): 321-328 (2017)

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