"Ultrathin HfOxNy Gate Insulator Formation by ..."

Shun'ichiro Ohmi, Tomoki Kurose, Masaki Satoh (2006)

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DOI: 10.1093/IETELE/E89-C.5.596

access: closed

type: Journal Article

metadata version: 2020-04-11

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Shun'ichiro Ohmi, Tomoki Kurose, Masaki Satoh:
Ultrathin HfO_xN_y Gate Insulator Formation by Electron Cyclotron Resonance Ar/N₂ Plasma Nitridation of HfO₂ Thin Films. IEICE Trans. Electron. 89-C(5): 596-601 (2006)

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