"Enhancement-Mode n-Channel GaN MOSFETs Using HfO₂ as a Gate Oxide."

Shun Sugiura et al. (2008)

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DOI: 10.1093/IETELE/E91-C.7.1001

access: closed

type: Journal Article

metadata version: 2020-10-26

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  - https://dblp.org/rec/journals/ieicet/SugiuraKMKUT08
Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani, Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka:
Enhancement-Mode n-Channel GaN MOSFETs Using HfO₂ as a Gate Oxide. IEICE Trans. Electron. 91-C(7): 1001-1003 (2008)

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