"An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm ..."

Mo Zhou, Yi Shan, Yemin Dong (2020)

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DOI: 10.1587/TRANSELE.2019ECS6017

access: closed

type: Journal Article

metadata version: 2021-01-18

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  - https://dblp.org/rec/journals/ieicetc/ZhouSD20
Mo Zhou, Yi Shan, Yemin Dong:
An Enhanced Well-Changed GGNMOS for 3.3-V ESD Protection in 0.13-µm SOI Process. IEICE Trans. Electron. 103-C(6): 332-334 (2020)

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