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"Design and characterisation of a new GaN/AlGaN HEMT transistor."

Naji Guedri, Naoufel Ismail, Rached Gharbi (2021)

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DOI: 10.1504/IJMIC.2021.123379

access: closed

type: Journal Article

metadata version: 2023-09-30

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Naji Guedri, Naoufel Ismail, Rached Gharbi:
Design and characterisation of a new GaN/AlGaN HEMT transistor. Int. J. Model. Identif. Control. 38(3/4): 302-311 (2021)

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