"A 0.33 V 2.5 μW cross-point data-aware write structure, ..."

Wei Jin et al. (2017)

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DOI: 10.1016/J.VLSI.2017.02.001

access: closed

type: Journal Article

metadata version: 2023-04-23

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Wei Jin, Weifeng He, Jianfei Jiang, Haichao Huang, Xuejun Zhao, Yanan Sun, Xin Chen, Naifeng Jing:
A 0.33 V 2.5 μW cross-point data-aware write structure, read-half-select disturb-free sub-threshold SRAM in 130 nm CMOS. Integr. 58: 27-34 (2017)

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