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"Analysis and compact modeling of a vertical grounded-base n-p-n bipolar ..."

Géraldine Bertrand et al. (2001)

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DOI: 10.1109/4.944666

access: closed

type: Journal Article

metadata version: 2022-04-09

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Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu:
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology. IEEE J. Solid State Circuits 36(9): 1373-1381 (2001)

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