"A Charge Domain SRAM Compute-in-Memory Macro With C-2C Ladder-Based 8-Bit ..."

Hechen Wang et al. (2023)

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DOI: 10.1109/JSSC.2022.3232601

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type: Journal Article

metadata version: 2023-04-29

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Hechen Wang, Renzhi Liu, Richard Dorrance, Deepak Dasalukunte, Dan Lake, Brent R. Carlton:
A Charge Domain SRAM Compute-in-Memory Macro With C-2C Ladder-Based 8-Bit MAC Unit in 22-nm FinFET Process for Edge Inference. IEEE J. Solid State Circuits 58(4): 1037-1050 (2023)

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