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"An accurate analytical I-V model for sub-90-nm MOSFETs and its application ..."

Behrouz Afzal et al. (2012)

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DOI: 10.1631/JZUS.C1100090

access: closed

type: Journal Article

metadata version: 2023-03-21

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Behrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Massoud Pedram:
An accurate analytical I-V model for sub-90-nm MOSFETs and its application to read static noise margin modeling. J. Zhejiang Univ. Sci. C 13(1): 58-70 (2012)

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