"Step thickness drift region automatic design of SOI LDMOS using ..."

Jing Chen et al. (2024)

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DOI: 10.1016/J.MEJO.2024.106410

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type: Journal Article

metadata version: 2024-09-30

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Jing Chen, Jiajun Guo, Qing Yao, Kemeng Yang, Jun Zhang, Jiafei Yao, Yufeng Guo:
Step thickness drift region automatic design of SOI LDMOS using physics-inspired constrained simulated annealing algorithm. Microelectron. J. 153: 106410 (2024)

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