"A 2D Transconductance and Sub-threshold behavior model for triple material ..."

P. Suveetha Dhanaselvam, N. B. Balamurugan, V. N. Ramakrishnan (2013)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2013.07.005

access: closed

type: Journal Article

metadata version: 2021-10-14

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/DhanaselvamBR13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/DhanaselvamBR13
P. Suveetha Dhanaselvam, N. B. Balamurugan, V. N. Ramakrishnan:
A 2D Transconductance and Sub-threshold behavior model for triple material surrounding gate (TMSG) MOSFETs. Microelectron. J. 44(12): 1159-1164 (2013)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.