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"A novel high-performance trench lateral double-diffused MOSFET with buried ..."

Hujun Jia et al. (2023)

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DOI: 10.1016/J.MEJO.2023.105911

access: closed

type: Journal Article

metadata version: 2023-09-14

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Hujun Jia, Yangyi Shen, Huan Wang, Xiaojie Wang, Yunfan Zhang, Shunwei Zhu, Yintang Yang:
A novel high-performance trench lateral double-diffused MOSFET with buried oxide bump layer. Microelectron. J. 139: 105911 (2023)

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