"Design of novel anti-ESD SCR-LDMOS with synergistic top SCR, vertical gate ..."

Weiye Li et al. (2025)

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DOI: 10.1016/J.MEJO.2025.106904

access: closed

type: Journal Article

metadata version: 2025-10-29

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Weiye Li, Hongli Dai, Luoxin Wang, Yuming Xue, Wenze Niu, Haitao Lyu, Jinjun Guo:
Design of novel anti-ESD SCR-LDMOS with synergistic top SCR, vertical gate and P-buried layer. Microelectron. J. 166: 106904 (2025)

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