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"Normally-off n-ZnO/p-diamond heterojunction field effect transistor with ..."

Wang Lin et al. (2023)

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DOI: 10.1016/J.MEJO.2023.105994

access: closed

type: Journal Article

metadata version: 2024-01-13

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Wang Lin, Pengfei Zhao, Liang He, Zhiyuan He, Qiliang Wang, Xianyi Lv, Liuan Li:
Normally-off n-ZnO/p-diamond heterojunction field effect transistor with recessed gate and current distribution layer. Microelectron. J. 142: 105994 (2023)

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