Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown ..."

Slimane Oussalah et al. (2022)

> Home

Details and statistics

DOI: 10.1016/J.MEJO.2022.105409

access: closed

type: Journal Article

metadata version: 2023-09-30

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mj/OussalahFGZLASH22
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mj/OussalahFGZLASH22
Slimane Oussalah, Walid Filali, Elyes Garoudja, Boumediene Zatout, Fouaz Lekoui, Rachid Amrani, Noureddine Sengouga, Mohamed Henini:
Analysis of I-V-T characteristics of Be-doped AlGaAs Schottky diodes grown on (100) GaAs substrates by molecular beam epitaxy. Microelectron. J. 122: 105409 (2022)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.