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"A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and ..."

Jianguo Yang et al. (2022)

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DOI: 10.1016/J.MEJO.2022.105550

access: closed

type: Journal Article

metadata version: 2022-10-26

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Jianguo Yang, Ruijun Lin, Keji Zhou, Yuejun Zhang, Xiaoyong Xue, Hangbing Lv:
A 28 nm 512 Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for high density and low BER cryptographic key in IoT devices. Microelectron. J. 128: 105550 (2022)

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