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"Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in ..."

F. Boige et al. (2017)

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DOI: 10.1016/J.MICROREL.2017.06.085

access: closed

type: Journal Article

metadata version: 2023-09-30

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F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud:
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectron. Reliab. 76-77: 500-506 (2017)

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