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"Degradation behavior of 600 V-200 A IGBT modules under power cycling and ..."

M. Bouarroudj et al. (2007)

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DOI: 10.1016/J.MICROREL.2007.07.027

access: closed

type: Journal Article

metadata version: 2024-01-25

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M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, Laurent Dupont, Stéphane Lefebvre:
Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions. Microelectron. Reliab. 47(9-11): 1719-1724 (2007)

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