"Experimental study of power MOSFET's gate damage in radiation environment."

Giovanni Busatto et al. (2006)

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DOI: 10.1016/J.MICROREL.2006.07.069

access: closed

type: Journal Article

metadata version: 2024-10-06

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Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò:
Experimental study of power MOSFET's gate damage in radiation environment. Microelectron. Reliab. 46(9-11): 1854-1857 (2006)

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