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"Thermal instability effects in SiC Power MOSFETs."

Alberto Castellazzi et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.06.096

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/CastellazziFKH12
Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara:
Thermal instability effects in SiC Power MOSFETs. Microelectron. Reliab. 52(9-10): 2414-2419 (2012)

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