"Post-breakdown leakage resistance and its dependence on device area."

Tze Wee Chen et al. (2006)

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DOI: 10.1016/J.MICROREL.2006.07.044

access: closed

type: Journal Article

metadata version: 2020-02-22

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Tze Wee Chen, Choshu Ito, William Loh, Robert W. Dutton:
Post-breakdown leakage resistance and its dependence on device area. Microelectron. Reliab. 46(9-11): 1612-1616 (2006)

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